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Manufacturer Part #

NVH4L022N120M3S

N-Channel 1200 V 68 A 352 W Through Hole Silicon Carbide MOSFET - TO-247-4L

Product Specification Section
onsemi NVH4L022N120M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 89A
Input Capacitance: 3175pF
Power Dissipation: 348W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
450
USA:
450
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$6,736.50
USD
Quantity
Unit Price
450+
$14.97