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Référence fabricant
SQ3419EV-T1_BE3
-40V,-6.9A,58MOHM,TSOP-6
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2447 | ||||||||||
Vishay SQ3419EV-T1_BE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: The affected part number listed in this notification will be converted to a Copper wire material set. The new ordering code is SQ3419CEV-T1_GE3, which has the exact same product performance and fit as SQ3419EV. There will be no change to the wafer fab or assembly location (Note: parts with _BE3 suffix will be consolidated to a single assembly location at Simconix). There will be nochanges to the parameters on the datasheet (reference: SQ3419CEV Doc # 62368 Rev.A).Reason for Change: Standardization of materials
Statut du produit:
Vishay SQ3419EV-T1_BE3 - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 58mΩ |
| Rated Power Dissipation: | 5W |
| Qg Gate Charge: | 11.3nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 6.9A |
| Turn-on Delay Time: | 8ns |
| Turn-off Delay Time: | 26ns |
| Rise Time: | 24ns |
| Fall Time: | 31ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | -2.5V |
| Input Capacitance: | 990pF |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Méthode de montage :
Surface Mount