Référence fabricant
IRFP4368PBF
Single N-Channel 75 V 1.85 mOhm 570 nC HEXFET® Power Mosfet - TO-247AC
Infineon IRFP4368PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Subject Capacity extension for dedicated Gen10.7 products by introduction of additional wafer manufacturing site at SamsungElectronics Co. Ltd., Korea and Infineon Technologies Dresden, GermanyReason Extension of wafer manufacturing sites for additional capacity to ensure continuity of supply and flexible manufacturingDescription Old - Wafer Production Location- Newport Wafer Fab Ltd.(NWF Ltd.), United Kingdom- Vanguard International Semiconductor Corporation, Taiwan- Tower Semiconductor Ltd., Israel- Infineon TechnologiesDresden GmbH, Dresden, GermanyNew - Wafer Production Location- Existing Wafer ProductionLocations see �old�- Samsung Electronics Co, Ltd., Korea- Infineon TechnologiesDresden GmbH, GermanyImpact of changeNO change on electrical, thermal parameters and reliability as proven via product qualification and characterizationNO change in existing datasheet parametersNO change in quality and reliability. Processes are optimized to meet product performance according to already applied Infineon specificationTime scheduleIntended start of delivery 2022-04-01 (or earlier based on customer approval)
Statut du produit:
Infineon IRFP4368PBF - Caractéristiques techniques
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 75V |
Drain-Source On Resistance-Max: | 1.85mΩ |
Rated Power Dissipation: | 520W |
Qg Gate Charge: | 570nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 350A |
Turn-on Delay Time: | 43ns |
Turn-off Delay Time: | 170ns |
Rise Time: | 220ns |
Fall Time: | 260ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 20.7mm |
Length: | 15.87mm |
Input Capacitance: | 19230pF |
Style d'emballage : | TO-247AC |
Méthode de montage : | Flange Mount |
Fonctionnalités et applications
International Rectifier is a world leader in power management technology.
IR has announced a new range of trench HEXFET PowerMOSFETs featuring benchmark low on-state resistance RDS(on) in a TO-247 package for synchronous rectification, active ORing and industrial applications including high power DC motors, DC to AC inverters and power tools.
The IRFP4368PBF features an improvement of up to 50 percent in RDS(on) over competing devices, eliminating the need for large and expensive packages typically used in industrial applications, and cutting overall system cost. Moreover, the low RDS(on) results in lower conduction losses and improved system efficiency.
The IRFP4368PBF is an N-Channel, 75V MOSFET, with a current rating of 195 Amps. It is constructed in a TO-247 package and provides a max RDS(on) rating of 1.85 Mohm. The device is qualified to industrial grade and moisture sensitivity level 1 (MSL1). The IRFP4368PBF is in offered lead free and are RoHS compliant.
Emballages disponibles
Qté d'emballage(s) :
25 par Tube
Style d'emballage :
TO-247AC
Méthode de montage :
Flange Mount