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Référence fabricant

NCD57001DWR2G

NCD57001 Series 5V Dual Output Isolated High Current IGBT Gate Driver - SOIC-16W

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Code de date:
Product Specification Section
onsemi NCD57001DWR2G - Caractéristiques techniques
Attributes Table
Configuration: Half Bridge
No of Outputs: Dual
Output Current: 6A
Supply Voltage-Max: 5V
Rated Power Dissipation: 1400mW
Turn-off Delay Time: 90ns
Turn-on Delay Time: 90ns
Rise Time: 10ns
Fall Time: 15ns
Operating Temp Range: -40°C to +125°C
Style d'emballage :  SOIC-16W
Méthode de montage : Surface Mount
Fonctionnalités et applications

Strong gate-drive capability and good signal integrity are the basic requirements for high-performance gate drivers. Safety, reliability and robustness are the added requirements for high-voltage and high-power designs. ON Semiconductor’s high-voltage gate drivers fulfil the
requirements of high-power designs by exceeding expectations in these parameters.

APPLICATIONS
• Heating, ventilation and air-conditioning equipment
• Power factor correction
• Uninterruptible power supplies
• Motor drives
• White goods
• Inverters
• Electric vehicle chargers

FEATURES
• Low propagation delay
• Dead-time control

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
23 Semaines
Commande minimale :
1000
Multiples de :
1000
Total 
2 290,00 $
USD
Quantité
Prix Internet
1 000+
$2.29