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onsemi NXH00xP120M Silicon Carbide EliteSiC™ Modules

Silicon Carbide (SiC) Module – EliteSiC, 3/4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

onsemi’s wide range of power components allows you to choose the power topology best fitting the size, cost and efficiency constraints of your design

The NXH003P120M3F2PTHG is a power module containing 3 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.

The NXH003P120M3F2PTNG is same as NXH003P120M3F2PTHG except its thermistor with Si3N4 DBC, not HPS DBC.

The NXH004P120M3F2PTHG is a power module containing 4 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.

The NXH004P120M3F2PTNG is same as NXH004P120M3F2PTHG except its thermistor with Si3N4 DBC, not HPS DBC.

Features

  • 3 mΩ for NXH003P120M3F2PTH(N)G
  • 4 mΩ for NXH004P120M3F2PTH(N)G
  • 1200 V M3S SiC MOSFET Half−Bridge
  • HPS DBC for NXH003(4)P120M3F2PTHG
  • Si3N4 DBC for NXH003(4)P120M3F2PTNG
  • Thermistor
  • Pre−Applied Thermal Interface Material (TIM)
  • Press−Fit Pins
  • These Devices are Pb−Free, Halide Free and are RoHS Compliant

Typical Applications

  • Solar Inverter
  • Uninterruptible Power Supplies
  • Electric Vehicle Charging Stations
  • Industrial Power
  • Energy Storage Systems

Benefits

  • Optimized switching performance with M3S
  • Industry leading low Rdson half-bridge
    • Si3N4 DBC for lower Rthjc
  • Easy to drive with negative gate voltages

 

For more information on the
onsemi SiC Solutions and Gate Driver Innovation

 

 

onsemi — NXH00xP120M Silicon Carbide EliteSiC™ Module