onsemi NXH00xP120M Silicon Carbide EliteSiC™ Modules
Silicon Carbide (SiC) Module – EliteSiC, 3/4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
onsemi’s wide range of power components allows you to choose the power topology best fitting the size, cost and efficiency constraints of your design
The NXH003P120M3F2PTHG is a power module containing 3 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.
The NXH003P120M3F2PTNG is same as NXH003P120M3F2PTHG except its thermistor with Si3N4 DBC, not HPS DBC.
The NXH004P120M3F2PTHG is a power module containing 4 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.
The NXH004P120M3F2PTNG is same as NXH004P120M3F2PTHG except its thermistor with Si3N4 DBC, not HPS DBC.
Features
| Typical Applications
Benefits
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NXH003P120M3F2 Schematic Diagram | Product HighlightsReduce cooling effort and extend life-time
Enhanced robustness in harsh environments
Lowest RDSon Half Bridge Module in F2 Package |
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