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Manufacturer Part #

NXH004P120M3F2PTHG

NXH004P120 Series 1200 V 5.5 mOhm Dual N-Channel SiC MOSFET Module - PIM-36

Product Specification Section
onsemi NXH004P120M3F2PTHG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Gate-Source Voltage-Max [Vgss]: 22V
Mounting Style: Vertical
Isolation Voltage-RMS: 4800V
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 284A
Configuration: Half Bridge
Operating Temp Range: -40°C to +175°C
Mounting Method: Press Fit
Pricing Section
Global Stock:
17
USA:
17
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$152.01
USD
Quantity
Web Price
1
$152.01
3
$149.82
5
$148.81
15
$146.66
25+
$144.77