onsemi — T10 Series of Mid-Voltage Power MOSFETs | Futureelectronics NorthAmerica Site
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onsemi — T10 Series of Mid-Voltage Power MOSFETs

 

onsemi

 

onsemi T10 Series of Mid-Voltage Power MOSFETs

High-performance devices suited for various power conversion and motor drive applications

onsemi’s T10 Power MOSFETs represent the next evolution in power transistor technology, delivering a superior combination of electrical performance, thermal management, and rugged reliability. Designed using advanced silicon processes and proprietary packaging techniques, the T10 series is optimized to meet the growing demands of high-performance power electronics applications.

The T10 40 V MOSFETs stand out as a best-in-class solution, offering exceptionally low RDS(on), high current-handling capabilities, and fast switching speeds, which contribute to higher system efficiency and greater power density. These devices are engineered for robust performance in a wide range of applications, including DC-DC conversion, motor control, synchronous rectification, and load switching.

With enhanced thermal characteristics and low gate charge, T10 40 V MOSFETs enable reduced conduction and switching losses, allowing for cooler operation, smaller heat sinks, and more compact system designs. The use of advanced packaging, such as copper clip technology and optimized die placement, minimizes parasitic inductance and resistance, further enhancing efficiency and power delivery.

Whether used in automotive, industrial, or consumer electronics, onsemi's T10 40 V MOSFETs deliver the performance, flexibility, and reliability that design engineers require to meet today’s stringent energy and space constraints.

Features

  • Improvements in Figure of Merit (FOM), Rsp, and power density help enhance performance and reduce overall system cost.
  • Lower Rsp, along with reduced Qg and Qgd values, contributes to improved overall efficiency.
  • Lower Qoss and Qrr values help minimize switching losses.
  • A softer recovery diode and lower Qrr reduce ringing, overshoot, and electromagnetic noise.
  • Enhanced robustness and excellent unclamped inductive switching (UIS) performance improve avalanche ruggedness in fast-switching applications.
  • The components are Pb-free, halogen-free/BFR-free, and fully RoHS compliant.

Applications

  • Motor Drive
  • Battery Protection
  • Oring

 

NVMFWS0D7N04XM

  • Power, Single N-Channel, STD Gate, SO-8FL
  • 40 V, 0.7 mΩ, 323 A

NVMFWS0D5N04XM

  • Power, Single N-Channel, STD Gate, SO-8FL
  • 40 V, 0.52 mΩ, 414 A

NVMFWS0D4N04XM

  • Power, Single N-Channel, STD Gate, SO-8FL
  • 40 V, 0.42 mΩ, 509 A

NTMFS0D5N04XL

  • Power, Single N-Channel, Logic Level, SO-8FL
  • 40 V, 0.49 mΩ, 455 A

NTMFD1D1N02X

  • Power, Dual, N-Channel, Power Clip, POWERTRENCH, Asymmetric
  • 25 V

 

onsemi T10 Series