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Microchip SP6LI mSiC™ MOSFET Module Evaluation Board

Effectively leverage the SP6LI SiC module in power electronics

The SP6LI mSiC MOSFET module evaluation board by Microchip is a versatile and essential tool for developers looking to leverage the SP6LI SiC module in power electronics. It streamlines the design process, reduces development risks and paves the way for the creation of energy-efficient, high-performance power electronic systems.

For electrical engineers and power system developers eager to harness the full potential of the SP6LI SiC module that utilizes our mSiC technology, the evaluation board is an invaluable resource. It simplifies the design process, mitigates the risks associated with high-power module integration and offers a scalable platform for driving innovation in energy-efficient, high-performance power electronic systems.

Microchip SP6LI Evaluation Board

This system enables users to:

  • Measure switching loss (Eon, Eoff and Qrr) and high-side and low-side overcurrent protection (DSAT)
  • Optimize gate driver switching behavior
  • Evaluate up to 1200V SP6LI mSiC MOSFET modules
  • Perform extensive thermal testing to assess performance in practical situations

 

The Module: MSCSM120AM03CT6LIAG

The Microchip MSCSM120AM03CT6LIAG is a high-performance SiC MOSFET power module designed for demanding applications such as welding converters, switched-mode power supplies, uninterruptible power supplies, and EV motor and traction drives.

Featuring low RDS(on) for reduced conduction losses and excellent high-temperature performance, it integrates a SiC Schottky diode with zero reverse and forward recovery for efficient, temperature-independent switching.

With very low stray inductance, an internal thermistor for precise temperature monitoring, and robust power connectors, the module delivers high efficiency, low thermal resistance, and is RoHS compliant, making it ideal for high-frequency, high-efficiency converters.

Features

  • SiC power MOSFET
    • Low RDS(on)
    • High temperature performance
  • SiC Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature independent switching behavior
    • Positive temperature coefficient on VF
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • M4 and M5 power connectors
  • M2.5 signals connectors
  • AlN substrate for improved thermal performance

Benefits

  • High efficiency converter
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low profile
  • RoHS compliant

Applications

  • Welding converters
  • Switched mode power supplies

 

  • Uninterruptible power supplies
  • EV motor and traction drive