Infineon — 1200 V CoolSiC™ MOSFET Gen 2

Infineon 1200 V CoolSiC™ MOSFET Gen 2

Builds on the strengths of Generation 1 technology

Infineon's 1200 V silicon carbide (SiC) CoolSiC MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in an application and the highest reliability in operation. This whole discrete CoolSiC MOSFET portfolio comes in 650 V, 750 V, 1200 V, 1700 V, and 2000 V voltage classes, with on-resistance ratings from 7 mΩ up to 1000 mΩ.

The 2nd generation of the CoolSiC 1200 V family by Infineon comes in a D²PAK-7L (TO-263-7) package for industrial applications. It builds on the strengths of Generation 1 technology with significant improvements in key figures-of-merit for both hard-switching operation and soft-switching topologies, suitable for all common combinations of AC/DC, DC/DC, and DC/AC stages.

CoolSiC™

CoolSiC trench technology enables a flexible parameter set to implement application-specific features in respective product portfolios, e.g., gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

Reference Design

The REF-DR3KIMBGSIC2MA SiC reference design consists of two PCBs, including a driver circuit and a 3-phase inverter for servo motors and drives. Benefits include high power density, passive cooling without cooling fans, and an ultra-small footprint with a PCB diameter of only 110 mm.