Manufacturer Part #
QSD123
QSD123 Series 30 V 880 nm Plastic Silicon Infrared Phototransistor - T-1 3/4
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:250 per Box Package Style:T-1 3/4 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi QSD123 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi QSD123 - Technical Attributes
Attributes Table
| Wavelength: | 880nm |
| Angle of Half Sensitivity: | ±12° |
| Power Dissipation: | 100mW |
| CE Voltage-Max: | 30V |
| Collector Current @ 25C: | 4mA |
| Package Style: | T-1 3/4 |
| Mounting Method: | Through Hole |
Features & Applications
The QSD123 is a 100 mW 30 V 880 nm Plastic Silicon Infrared Phototransistor. It comes in a Package of T-1 3/4 and Operating temperature ranges from -40 °C to 100 °C.
Features:
- NPN Silicon Phototransistor
- Package Type: T-1 3/4
- Notched Emitter: QED12X/QED22X/QED23X
- Narrow Reception Angle: 24°C
- Daylight Filter
- Package Material and Color: Black Epoxy
- High Sensitivity
Applications:
- Automation
- Building & Home Controls
- Medical Electronics/Devices
- Home Audio System Components
- Consumer Appliances
View the QSD12 Series of Phototransistor
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
17 Weeks
Quantity
Web Price
1
$0.186
250
$0.18
1,000
$0.173
3,000
$0.168
12,500+
$0.156
Product Variant Information section
Available Packaging
Package Qty:
250 per Box
Package Style:
T-1 3/4
Mounting Method:
Through Hole