Manufacturer Part #
SST25VF512-20-4C-SAE
SST25VF Series 512 Kbit 64 K x 8 3 V Surface Mount SPI Serial Flash - SOIC-8
Microchip SST25VF512-20-4C-SAE - Product Specification
Shipping Information:
ECCN:
PCN Information:
PCN Status:Final NotificationDescription of Change:Qualification of MTAI as additional final test site for SST25VF512-20-4C-SAE and SST25VF512-20-4C-SAE-T catalog part numbers (CPN) available in 8L SOIC (.150in) package.Reason for Change:To improve manufacturability by qualifying MTAI as additional final test site.Estimated First Ship Date:October 1, 2022 (date code: 2240)
CCB 4968 Initial Notice: Qualification of MTAI as additional final test site for selected SST25VF512 device family available in 8L SOIC (.150in) package.PCN Status:Initial NotificationPCN Type:Manufacturing ChangeDescription of Change:Qualification of MTAI as additional final test site for selected SST25VF512 device family available in 8L SOIC (.150in) package.Impacts to Data Sheet:NoneChange ImpactNoneReason for Change:To improve manufacturability by qualifying MTAI as additional final test site.Change Implementation Status:In ProgressEstimated Qualification Completion Date:March 2022
Part Status:
Microchip SST25VF512-20-4C-SAE - Technical Attributes
Clock Frequency-Max: | 20MHz |
Memory Density: | 512kb |
Memory Organization: | 64 K x 8 |
Supply Voltage-Nom: | 2.7V to 3.6V |
Temperature Grade: | Commercial |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
Features & Applications
NOTE: This SST product is migrating to the preferred Microchip (MCP) part number. All products bearing the Microchip part number are identical in form, fit and function to the products with the legacy SST prefix/logo mark.
The SST25VF512-20-4C-SAE is a part of SST25VF series SPI Serial Flash. It has an standard industria operating temperature ranging from -40°C to +85°C, it comes in SOIC-8 package.
SST25VF512 SPI serial flash memory is manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Features:
- Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3
- Low Power Consumption: – Active Read Current: 7 mA (typical) – Standby Current: 8 μA (typical)
- Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks
- Fast Erase and Byte-Program: – Chip-Erase Time: 70 ms (typical) – Sector- or Block-Erase Time: 18 ms (typical) – Byte-Program Time: 14 μs (typical)
- Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations
- Packages Available – 8-lead SOIC (4.9mm x 6mm) – 8-contact WSON
- All non-Pb (lead-free) devices are RoHS compliant
Available Packaging
Package Qty:
100 per Tube
Package Style:
SOIC-8
Mounting Method:
Surface Mount