Microchip | SST39SF020A-70-4C-PHE

CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.   This device writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.

Featuring high performance Byte-Program,  provides a maximum Byte-Program time of 20 µsec (microsecond). Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 10,000 cycles. Data retention is rated at greater than 100 years.

It is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during erase and program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. This device also improves flexibility while lowering the cost for program, data, and configuration storage applications.

To meet high density, surface mount requirements, offered in 32-lead PLCC and 32-lead TSOP packages. A 600 mil, 32-pin PDIP is also available.