NXH80B120MNQ0SNG in Tray by onsemi | Silicon Carbide Power Modules (SiC Power Modules) | Future Electronics
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onsemi | NXH80B120MNQ0SNG

Manufacturer Part #

NXH80B120MNQ0SNG

Dual-Channel 1200 V 69 A 80 mOhm 69 W SiC Dual Boost Power Module - Q0BOOST

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2330
Product Specification Section
onsemi NXH80B120MNQ0SNG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Gate-Source Voltage-Max [Vgss]: 25V
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 23A
Configuration: Dual Boost Chopper
Operating Temp Range: -40°C to +175°C
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
24
USA:
24
On Order:
0
Factory Stock:Factory Stock:
1,920
Factory Lead Time:
10 Weeks
Minimum Order:
24
Multiple Of:
24
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,286.88
USD
Quantity
Unit Price
24
$53.62
48
$53.23
72+
$52.83
Product Variant Information section