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Manufacturer Part #

NXH010P120MNF1PTG

Dual N-Channel 1200 V 114 A 413 W 14 mOhm Silicon Carbide MOSFET Module - PIM-18

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2445
Product Specification Section
onsemi NXH010P120MNF1PTG - Technical Attributes
Attributes Table
Type: Half-Bridge Module
Technology: SiC (Silicon Carbide) Schottky
Gate-Source Voltage-Max [Vgss]: 1200V
Drain Current: 114A
Configuration: Half Bridge
Operating Temp Range: -40°C to +150°C
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
10
USA:
10
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$161.91
USD
Quantity
Unit Price
1
$161.91
3
$159.58
5
$158.50
15
$156.22
25+
$154.20
Product Variant Information section