Manufacturer Part #
NXH003P120M3F2PTNG
NXH003P120 Series 1200 V 435 A 5 mOhm Dual N-Channel SiC MOSFET Module - PIM-36
Product Specification Section
onsemi NXH003P120M3F2PTNG - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi NXH003P120M3F2PTNG - Technical Attributes
Attributes Table
Technology: | SiCFET (Silicon Carbide) |
Gate-Source Voltage-Max [Vgss]: | 22V |
Mounting Style: | Vertical |
Isolation Voltage-RMS: | 4800V |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain Current: | 435A |
Configuration: | Half Bridge |
Operating Temp Range: | -40°C to +175°C |
Mounting Method: | Press Fit |
Pricing Section
Global Stock:
60
USA:
60
Factory Lead Time:
12 Weeks
Quantity
Unit Price
20+
$208.48
Product Variant Information section
Available Packaging
Package Qty:
20 per Tray
Mounting Method:
Press Fit