Manufacturer Part #
FF6MR12W2M1HB70BPSA1
1200 V 150 A Dual N-Channel Chassis Mount CoolSiC Trench MOSFET Module
Product Specification Section
Infineon FF6MR12W2M1HB70BPSA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon FF6MR12W2M1HB70BPSA1 - Technical Attributes
Attributes Table
Technology: | SiCFET (Silicon Carbide) |
Gate-Source Voltage-Max [Vgss]: | 23V |
Isolation Voltage-RMS: | 3000V |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain Current: | 150A |
Configuration: | Half Bridge |
Operating Temp Range: | -40°C to +150°C |
Package Style: | Module |
Mounting Method: | Chassis Mount |
Pricing Section
Global Stock:
2
USA:
2
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
15+
$183.90
Product Variant Information section
Available Packaging
Package Qty:
15 per Tray
Package Style:
Module
Mounting Method:
Chassis Mount