Manufacturer Part #
BSM300D12P4G101
2 N-Channel 1200 V 291 A 925 W Half Bridge Chassis Mount SiC Power Module
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| Mfr. Name: | ROHM | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4 per Box Package Style:Module Mounting Method:Chassis Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
ROHM BSM300D12P4G101 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
ROHM BSM300D12P4G101 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Gate-Source Voltage-Max [Vgss]: | 21V |
| Isolation Voltage-RMS: | 2500V |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 291A |
| Configuration: | Half Bridge |
| Operating Temp Range: | -40°C to +150°C |
| Package Style: | Module |
| Mounting Method: | Chassis Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
27 Weeks
Quantity
Web Price
4+
$889.21
Product Variant Information section
Available Packaging
Package Qty:
4 per Box
Package Style:
Module
Mounting Method:
Chassis Mount