Manufacturer Part #
SCTWA50N120
SCTWA50N120 Series 1200 V 65 A Silicon carbide Power MOSFET - HiP-247 (TO-247-3)
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:600 per Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics SCTWA50N120 - Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics SCTWA50N120 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 65A |
| Input Capacitance: | 1900pF |
| Power Dissipation: | 318W |
| Operating Temp Range: | -55°C to +200°C |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
32 Weeks
Quantity
Unit Price
600+
$18.36
Product Variant Information section
Available Packaging
Package Qty:
600 per
Package Style:
TO-247-3
Mounting Method:
Through Hole