Manufacturer Part #
SCT50N120
N-Channel 1200 V 59 mΩ 122 nC Silicon Carbide Power Mosfet - HiP247
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Mfr. Name: | STMicroelectronics | ||||||||||
Standard Pkg: | Product Variant Information section Available Packaging
Package Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
Date Code: |
Product Specification Section
STMicroelectronics SCT50N120 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics SCT50N120 - Technical Attributes
Attributes Table
Technology: | SiCFET (Silicon Carbide) |
Product Status: | Active |
Fet Type: | N-Ch |
No. of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain Current: | 65A |
Input Capacitance: | 1900pF |
Power Dissipation: | 318W |
Operating Temp Range: | -55°C to +200°C |
Package Style: | TO-247-3 |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
32 Weeks
Quantity
Unit Price
1
$18.53
5
$18.28
20
$18.07
50
$17.92
125+
$17.65
Product Variant Information section
Available Packaging
- Tube Qty: 30+ / Unit Price: $18.18 / Stock: 0 Qty: 30+$18.18 Stock: 0
- Tube Qty: 30+ / Unit Price: $18.18 / Stock: 0 Qty: 30+$18.18 Stock: 0
- Tube Qty: 1+ / Unit Price: $18.53 / Stock: 527 Qty: 1+$18.53 Stock: 527
- Tube Qty: 600+ / Unit Price: $17.82 / Stock: 0 Qty: 600+$17.82 Stock: 0
- Tube Qty: 600+ / Unit Price: $18.00 / Stock: 0 Qty: 30+$18.00 Stock: 0
- TubeSelected Variant Qty: 600+ / Unit Price: $18.53 / Stock: 0 Qty: 1+$18.53 Stock: 0
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole