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Manufacturer Part #

SCT040HU120G3AG

Automotive-grade silicon carbide Power MOSFET, 1200V, 40 A, 40 m

Product Specification Section
STMicroelectronics SCT040HU120G3AG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1.2kV
Drain Current: 40A
Power Dissipation: 300W
Operating Temp Range: -55°C to +175°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
600
USA:
600
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
600
Multiple Of:
600
Total
$6,480.00
USD
Quantity
Web Price
600+
$10.80