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onsemi | NVH4L025N065SC1

Manufacturer Part #

NVH4L025N065SC1

N-Channel 650 V 99 A 348 W Through Hole Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2442
Product Specification Section
onsemi NVH4L025N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 99A
Input Capacitance: 3480pF
Power Dissipation: 348W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
9,900
USA:
9,900
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$16.82
USD
Quantity
Unit Price
1
$16.82
5
$16.59
20
$16.40
50
$16.27
125+
$16.02
Product Variant Information section