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Manufacturer Part #

NTMT045N065SC1

N-Channel 650 V 55 A 187 W Surface Mount Silicon Carbide MOSFET - TDFN-4 (8x8)

Product Specification Section
onsemi NTMT045N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 55A
Input Capacitance: 1870pF
Power Dissipation: 187W
Operating Temp Range: -55°C to +175°C
Package Style:  TDFN-4
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
27 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$6.34
USD
Quantity
Unit Price
1
$6.34
10
$6.27
30
$6.22
125
$6.16
300+
$6.07