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Manufacturer Part #

NTHL022N120M3S

N-Channel 1200 V 68 A 352 W Through Hole Silicon Carbide MOSFET - TO-247-3

Product Specification Section
onsemi NTHL022N120M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 89A
Input Capacitance: 3175pF
Power Dissipation: 348W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
450
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,230.00
USD
Quantity
Unit Price
30
$9.62
60
$9.57
120
$9.52
150
$9.50
450+
$9.40