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onsemi | NTH4L070N120M3S

Manufacturer Part #

NTH4L070N120M3S

N-Channel 1200 V 34 A 160 W Through Hole Silicon Carbide MOSFET - TO-247-4L

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Mfr. Name: onsemi
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Product Specification Section
onsemi NTH4L070N120M3S - Technical Attributes
Attributes Table
Technology: SiC (Silicon Carbide) Schottky
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1.2kV
Drain Current: 37A
Input Capacitance: 1230pF
Power Dissipation: 252W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$3.92
USD
Quantity
Unit Price
1
$3.92
15
$3.84
50
$3.78
150
$3.73
500+
$3.62
Product Variant Information section