NTH4L020N120SC1 in Tube by onsemi | Silicon Carbide MOSFETs (SiC MOSFETs) | Future Electronics
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Manufacturer Part #

NTH4L020N120SC1

NTH4L Series 1200 V 28 mOhm 510 W Through Hole N-Channel Power Mosfet - TO-247-4

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2329
Product Specification Section
onsemi NTH4L020N120SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 102A
Input Capacitance: 2943pF
Power Dissipation: 510W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4L
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
13,050
Factory Lead Time:
17 Weeks
Minimum Order:
450
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$11,268.00
USD
Quantity
Unit Price
1
$27.39
4
$27.04
15
$26.72
20
$25.61
40
$26.48
100
$26.09
125+
$25.04
Product Variant Information section