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Manufacturer Part #

NTBG080N120SC1

Single N-Channel 1200 V 30 A 179 W Surface Mount SiC Power Mosfet - D2PAK-7L

Product Specification Section
onsemi NTBG080N120SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 30A
Input Capacitance: 1154pF
Power Dissipation: 179W
Operating Temp Range: -55°C to +175°C
Package Style:  D2PAK-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,888.00
USD
Quantity
Unit Price
800+
$6.11