text.skipToContent text.skipToNavigation

Manufacturer Part #

NTBG022N120M3S

N-Channel 1200 V 30 mOhm 234 W Surface Mount SiC MOSFET - D2PAK-7

Product Specification Section
onsemi NTBG022N120M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 58A
Input Capacitance: 3200pF
Power Dissipation: 234W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
110
Germany (Online Only):
110
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$9.80
USD
Quantity
Unit Price
1
$9.80
5
$9.68
25
$9.56
75
$9.48
200+
$9.34