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Manufacturer Part #

MSC040SMA120B

1200 V 66A 323W Through Hole Silicon Carbide N-Channel Power MOSFET-TO-247-3

ECAD Model:
Mfr. Name: Microchip
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Microchip MSC040SMA120B - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 66A
Input Capacitance: 1990pF
Power Dissipation: 323W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
4 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$539.70
USD
Quantity
Unit Price
30
$17.99
60
$17.88
90
$17.82
120
$17.78
150+
$17.64
Product Variant Information section