Manufacturer Part #
IMBG120R181M2HXTMA1
CoolSiC Series 1200 V 14.9 A 181.4 mOhm Single N-Channel SiC MOSFET - TO-263-7
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Package Style:D2PAK-7 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2322 | ||||||||||
Product Specification Section
Infineon IMBG120R181M2HXTMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IMBG120R181M2HXTMA1 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 14.9A |
| Input Capacitance: | 350pF |
| Power Dissipation: | 94W |
| Operating Temp Range: | -55°C to +175°C |
| Package Style: | D2PAK-7 |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
15
USA:
15
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Web Price
1
$4.03
10
$3.66
40
$3.44
150
$3.22
500+
$3.03
Product Variant Information section
Available Packaging
Package Qty:
1000 per
Package Style:
D2PAK-7
Mounting Method:
Surface Mount