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  6. DMWS120H100SM4

Diodes Incorporated | DMWS120H100SM4

Manufacturer Part #

DMWS120H100SM4

DMWS120 Series 1200 V 37.2 A 100 mOhm Single N-Channel SiC MOSFET - TO-247-4

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMWS120H100SM4 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 37.2A
Input Capacitance: 1516pF
Power Dissipation: 208W
Operating Temp Range: -55°C to +150°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
1,830
Factory Lead Time:
40 Weeks
Minimum Order:
30
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$406.50
USD
Quantity
Unit Price
30
$13.55
90
$13.45
120
$13.42
300
$13.33
450+
$13.24
Product Variant Information section