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Manufacturer Part #

DMWS120H100SM4

DMWS120 Series 1200 V 37.2 A 100 mOhm Single N-Channel SiC MOSFET - TO-247-4

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMWS120H100SM4 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 37.2A
Input Capacitance: 1516pF
Power Dissipation: 208W
Operating Temp Range: -55°C to +150°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
1,830
Factory Lead Time:
40 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$361.20
USD
Quantity
Web Price
30
$12.04
60
$11.98
120
$11.91
150
$11.89
450+
$11.77
Product Variant Information section