Manufacturer Part #
STW88N65M5
STW88N65M5 Series 650 V 0.029 Ohm 84 A N-Channel MDmesh™ V Power Mosfet-TO-247-3
Product Specification Section
STMicroelectronics STW88N65M5 - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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STMicroelectronics STW88N65M5 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 0.024Ω |
Rated Power Dissipation: | 450|W |
Qg Gate Charge: | 204nC |
Gate-Source Voltage-Max [Vgss]: | 25V |
Drain Current: | 84A |
Gate Source Threshold: | 4V |
Package Style: | TO-247-3 |
Mounting Method: | Flange Mount |
Features & Applications
The STW88N65M5 is a N-channel MDmesh™ V Power MOSFET. This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
The resulting product has extremely low on-resistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features:
- Worldwide best RDS(on) in TO-247
- Higher VDSS rating
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
Applications:
- Servers
- PV inverters
- Telecom infrastructure
- Multi kW battery chargers
Pricing Section
Global Stock:
1,200
Germany (Online Only):
1,200
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
30
$8.68
90
$8.61
120
$8.59
300
$8.54
450+
$8.48
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Flange Mount