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Manufacturer Part #

STP80N1K1K6

STP80N Series N-Channel 800 V 5A 62W Through Hole MOSFET TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2311
Product Specification Section
STMicroelectronics STP80N1K1K6 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 1.1Ω
Rated Power Dissipation: 62W
Qg Gate Charge: 5.7nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 5A
Turn-on Delay Time: 7.4ns
Turn-off Delay Time: 22ns
Rise Time: 4.3ns
Fall Time: 14ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: MDmesh
Input Capacitance: 300pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
1,000
Germany (Online Only):
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$32.00
USD
Quantity
Unit Price
50
$0.64
200
$0.62
750
$0.605
2,000
$0.595
5,000+
$0.575
Product Variant Information section