STP28NM60ND in Tube by STMicroelectronics | Mosfets | Future Electronics
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Manufacturer Part #

STP28NM60ND

Single N-Channel 650 V 0.15 Ω 190 W Flange Mount Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STP28NM60ND - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 150mΩ
Rated Power Dissipation: 190W
Qg Gate Charge: 62.5nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 23A
Turn-on Delay Time: 23.5ns
Turn-off Delay Time: 92ns
Rise Time: 21.5ns
Fall Time: 27ns
Gate Source Threshold: 4V
Input Capacitance: 2090pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,600.00
USD
Quantity
Unit Price
50
$3.77
150
$3.71
250
$3.69
500
$3.65
1,000+
$3.60
Product Variant Information section