STP16NF06 in Tube by STMicroelectronics | Mosfets | Future Electronics
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Manufacturer Part #

STP16NF06

N-Channel 60 V 0.1 Ω 10 nC STripFET™ II MosFet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
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Product Specification Section
STMicroelectronics STP16NF06 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 100mΩ
Rated Power Dissipation: 45W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 16A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 17ns
Rise Time: 18ns
Fall Time: 6ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 315pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The STP16NF06 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density or low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features:

  • Exceptional dv/dt capability
  • Low gate charge at 100°C
  • Application oriented characterization

Applications:

  • Switching application
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Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
6000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,100.00
USD
Quantity
Unit Price
50
$0.375
250
$0.365
1,000
$0.355
2,500
$0.35
6,250+
$0.335