Manufacturer Part #
STD65N55F3
N-Channel 55 V 8.5 mOhm Surface Mount STripFET Power MosFet - TO-252
Product Specification Section
STMicroelectronics STD65N55F3 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics STD65N55F3 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 8.5mΩ |
Rated Power Dissipation: | 110W |
Qg Gate Charge: | 33.5nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 80A |
Turn-on Delay Time: | 20ns |
Turn-off Delay Time: | 35ns |
Rise Time: | 50ns |
Fall Time: | 11.5ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Input Capacitance: | 2200pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
12,500
Germany (Online Only):
12,500
Factory Lead Time:
26 Weeks
Quantity
Unit Price
2,500+
$0.95
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount