Manufacturer Part #
STB11NM60T4
N-Channel 600 V 450 mOhm 160 W Surface Mount MDmesh™ Power Mosfet - D2PAK
Product Specification Section
STMicroelectronics STB11NM60T4 - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
Active
STMicroelectronics STB11NM60T4 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 600V |
Drain-Source On Resistance-Max: | 450mΩ |
Rated Power Dissipation: | 160|W |
Qg Gate Charge: | 30nC |
Gate-Source Voltage-Max [Vgss]: | 30V |
Drain Current: | 11A |
Turn-on Delay Time: | 20ns |
Rise Time: | 20ns |
Fall Time: | 11ns |
Operating Temp Range: | -65°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | MDmesh |
Height - Max: | 4.6mm |
Length: | 10.4mm |
Input Capacitance: | 1000pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
13 Weeks
Quantity
Web Price
1,000
$1.93
2,000+
$1.88
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount