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Vishay | SQJ963EP-T1_GE3

Manufacturer Part #

SQJ963EP-T1_GE3

SQJ963EP Series 60 V 8 A Automotive Dual P-Channel Mosfet - PowerPAK® SO-8L

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SQJ963EP-T1_GE3 - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.085Ω
Rated Power Dissipation: 27|W
Qg Gate Charge: 26.5nC
Drain Current: 25A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 36ns
Rise Time: 13ns
Fall Time: 8ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Technology: PowerTrench
Height - Max: 1.04mm
Length: 6.15mm
Input Capacitance: 912pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Total
$3,180.00
USD
Quantity
Unit Price
3,000
$1.06
6,000+
$1.05
Product Variant Information section