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Manufacturer Part #

SI3552DV-T1-E3

30V N & P CH (D-S) TRENCH

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2336
Product Specification Section
Vishay SI3552DV-T1-E3 - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
Drain-to-Source Voltage [Vdss]: 30V/-30V
Drain-Source On Resistance-Max: 0.105Ω/0.2Ω
Rated Power Dissipation: 1.15|W
Qg Gate Charge: 2.1nC/2.4nC
Package Style:  SC-74 (TSOP-6)
Mounting Method: Surface Mount
Features & Applications

The SI3552DV-T1-E3 is a N- and P-Channel 30-V (D-S) MOSFET.

It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a TSOP-6 package.

Features:

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • 100 % Rg Tested
  • Compliant to RoHS Directive 2002/95/EC
Pricing Section
Global Stock:
6,000
USA:
3,000
Germany (Online Only):
3,000
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
6 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$615.00
USD
Quantity
Unit Price
3,000
$0.205
9,000
$0.20
15,000+
$0.198
Product Variant Information section