SI2329DS-T1-GE3 in Reel by Vishay | Mosfets | Future Electronics
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Manufacturer Part #

SI2329DS-T1-GE3

Si2329DS Series 8 V 5.3 A 0.03 Ohm SMT P-Channel MOSFET - SOT-23-3

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2420
Product Specification Section
Vishay SI2329DS-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 8V
Drain-Source On Resistance-Max: 0.03Ω
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 11.8nC
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
321,000
USA:
321,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$597.00
USD
Quantity
Unit Price
3,000
$0.199
6,000
$0.197
9,000
$0.195
12,000
$0.194
15,000+
$0.191
Product Variant Information section