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Manufacturer Part #

NVMS5P02R2G

NVMS5P02 Series 20 V 3.95 A 33 mOhm SMT P-Channel Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NVMS5P02R2G - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 33mΩ
Rated Power Dissipation: 0.79W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 10V
Drain Current: 3.95A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 65ns
Rise Time: 70ns
Fall Time: 90ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.9V
Input Capacitance: 1375pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
5000
Multiple Of:
2500
Total
$2,000.00
USD
Quantity
Unit Price
2,500
$0.405
5,000
$0.40
7,500
$0.395
10,000+
$0.39
Product Variant Information section