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Manufacturer Part #
NTH4L040N120M3S
1200 V 54A 231W Through Hole N-Channel Silicon Carbide MOSFET - TO-247-4L
Product Specification Section
onsemi NTH4L040N120M3S - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi NTH4L040N120M3S - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain-Source On Resistance-Max: | 20Ω |
| Rated Power Dissipation: | 319W |
| Qg Gate Charge: | 106nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 58A |
| Turn-on Delay Time: | 30ns |
| Turn-off Delay Time: | 51ns |
| Rise Time: | 36ns |
| Fall Time: | 20ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4.3V |
| Technology: | SiC |
| Input Capacitance: | 1762pF |
| Series: | NVH4L |
| Package Style: | TO-247-4 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
450
USA:
450
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
30
$8.23
90
$8.16
120
$8.15
300
$8.09
450+
$8.04
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-4
Mounting Method:
Through Hole