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onsemi | NTH4L040N120M3S

Manufacturer Part #

NTH4L040N120M3S

1200 V 54A 231W Through Hole N-Channel Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2343
Product Specification Section
onsemi NTH4L040N120M3S - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 20Ω
Rated Power Dissipation: 319W
Qg Gate Charge: 106nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 58A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 51ns
Rise Time: 36ns
Fall Time: 20ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.3V
Technology: SiC
Input Capacitance: 1762pF
Series: NVH4L
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
1,800
USA:
450
Germany (Online Only):
1,350
On Order:Order inventroy details
2,250
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
30
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$237.90
USD
Quantity
Unit Price
30
$7.93
90
$7.87
120
$7.85
300
$7.80
450+
$7.75
Product Variant Information section