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Manufacturer Part #

NP36P04KDG-E1-AY

Low voltage power mosfet, SMD/SMT, TO-263-3

ECAD Model:
Mfr. Name: Renesas
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Renesas NP36P04KDG-E1-AY - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 17mΩ
Rated Power Dissipation: 56W
Qg Gate Charge: 55nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 36A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 250ns
Rise Time: 10ns
Fall Time: 140ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Input Capacitance: 2800pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1600
Multiple Of:
800
Total
$1,576.00
USD
Quantity
Web Price
800
$1.01
1,600
$0.985
2,400
$0.975
3,200
$0.965
4,000+
$0.935
Product Variant Information section