Manufacturer Part #
NP100P06PDG-E1-AY
NP100P06PDG P-Channel 60 V 7.8 mOhm 200 W 300 nC Switching MosFet - TO-263
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| Mfr. Name: | Renesas | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2431 | ||||||||||
Product Specification Section
Renesas NP100P06PDG-E1-AY - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Renesas NP100P06PDG-E1-AY - Technical Attributes
Attributes Table
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 7.8mΩ |
| Rated Power Dissipation: | 200|W |
| Qg Gate Charge: | 300nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The NP100P06PDG-E1-AY is a part of NP100P06PDG series P-Channel switching power MOSFET. It has a storage temperature ranging from -55°C to +175°C and its available in TO-263 package.
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features:
- Super low on-state resistance:
- RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A)
- RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
- High current rating: ID(DC) = ±100 A
View the available family of P-Channel switching power MOSFET
Pricing Section
Global Stock:
800
Germany (Online Only):
800
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Web Price
800
$2.44
1,600+
$2.38
Product Variant Information section
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount