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Manufacturer Part #

IRLS3036TRLPBF

Single N-Channel 60 V 2.8 mOhm 140 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRLS3036TRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 2.8mΩ
Rated Power Dissipation: 380W
Qg Gate Charge: 140nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 270A
Turn-on Delay Time: 66ns
Turn-off Delay Time: 110ns
Rise Time: 220ns
Fall Time: 110ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.5V
Technology: Si
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 11210pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,184.00
USD
Quantity
Unit Price
800
$1.48
1,600
$1.47
2,400+
$1.45
Product Variant Information section