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Manufacturer Part #
IRLML6402TRPBF
Single P-Channel 20 V 0.065 Ohm 8 nC HEXFET® Power Mosfet - MICRO-3
Product Specification Section
Infineon IRLML6402TRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Process Change
06/26/2023 Details and Download
Part Status:
Active
Active
Infineon IRLML6402TRPBF - Technical Attributes
Attributes Table
Fet Type: | P-Ch |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 0.065Ω |
Rated Power Dissipation: | 1.3|W |
Qg Gate Charge: | 8nC |
Package Style: | MICRO-3 |
Mounting Method: | Surface Mount |
Features & Applications
The IRLML6402TRPBF is a 20 V fast switching Single P-Channel HEXFET Power Mosfet, available in a low profile MICRO-3 package.
It utilizes a advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in many applications.
Features:
- Ultra Low On-Resistance
- P-Channel MOSFET
- SOT-23 Footprint
- Low Profile (<1.1mm)
- Available in Tape and Reel
- Fast Switching
- Lead-Free
- Halogen-Free
Applications:
- Battery
- Load Management
- Portable electronics
- PCMCIA cards
Pricing Section
Global Stock:
930,000
Germany (Online Only):
930,000
Factory Lead Time:
12 Weeks
Quantity
Web Price
3,000
$0.0746
9,000
$0.0718
15,000
$0.0705
45,000
$0.0679
75,000+
$0.0656
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
MICRO-3
Mounting Method:
Surface Mount