
Manufacturer Part #
IRFR9024NTRPBF
Single P-Channel 55V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-252-3
Product Specification Section
Infineon IRFR9024NTRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
ADVISORY
11/14/2022 Details and Download
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Active
Active
Infineon IRFR9024NTRPBF - Technical Attributes
Attributes Table
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 0.175Ω |
Rated Power Dissipation: | 38W |
Qg Gate Charge: | 19nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 11A |
Turn-on Delay Time: | 13ns |
Turn-off Delay Time: | 23ns |
Rise Time: | 55ns |
Fall Time: | 37ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 350pF |
Package Style: | TO-252AA |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
257
USA:
257
Product Variant Information section
Available Packaging
Package Qty:
2000 per
Package Style:
TO-252AA
Mounting Method:
Surface Mount