Manufacturer Part #
IRFR4620TRLPBF
Single N-Channel 200 V 78 mOhm 38 nC HEXFET® Power Mosfet - TO-252-3
Infineon IRFR4620TRLPBF - Product Specification
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Subject Capacity extension for dedicated Gen10.7 products by introduction of additional wafer manufacturing site at SamsungElectronics Co. Ltd., Korea and Infineon Technologies Dresden, GermanyReason Extension of wafer manufacturing sites for additional capacity to ensure continuity of supply and flexible manufacturingDescription Old - Wafer Production Location- Newport Wafer Fab Ltd.(NWF Ltd.), United Kingdom- Vanguard International Semiconductor Corporation, Taiwan- Tower Semiconductor Ltd., Israel- Infineon TechnologiesDresden GmbH, Dresden, GermanyNew - Wafer Production Location- Existing Wafer ProductionLocations see �old�- Samsung Electronics Co, Ltd., Korea- Infineon TechnologiesDresden GmbH, GermanyImpact of changeNO change on electrical, thermal parameters and reliability as proven via product qualification and characterizationNO change in existing datasheet parametersNO change in quality and reliability. Processes are optimized to meet product performance according to already applied Infineon specificationTime scheduleIntended start of delivery 2022-04-01 (or earlier based on customer approval)
Part Status:
Infineon IRFR4620TRLPBF - Technical Attributes
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 78mΩ |
Rated Power Dissipation: | 144W |
Qg Gate Charge: | 38nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 24A |
Turn-on Delay Time: | 13.4ns |
Turn-off Delay Time: | 25.4ns |
Rise Time: | 22.4ns |
Fall Time: | 14.8ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 5V |
Technology: | Si |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 1710pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
3000 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount