Manufacturer Part #
IRFR3410TRPBF
Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - TO-252-3
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Package Style:TO-252AA Mounting Method:Surface Mount | ||||||||||
| Date Code: | 1952 | ||||||||||
Product Specification Section
Infineon IRFR3410TRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
ADVISORY
11/14/2022 Details and Download
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Active
Active
Infineon IRFR3410TRPBF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 39mΩ |
| Rated Power Dissipation: | 3W |
| Qg Gate Charge: | 56nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 31A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 40ns |
| Rise Time: | 27ns |
| Fall Time: | 13ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 1690pF |
| Package Style: | TO-252AA |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
12
USA:
12
On Order:
0
Factory Lead Time:
10 Weeks
Quantity
Web Price
1
$0.795
15
$0.69
50
$0.645
250
$0.585
1,000+
$0.53
Product Variant Information section
Available Packaging
Package Qty:
2000 per
Package Style:
TO-252AA
Mounting Method:
Surface Mount