IRFP250NPBF in Tube by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRFP250NPBF

Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2206
Product Specification Section
Infineon IRFP250NPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.075Ω
Rated Power Dissipation: 214W
Qg Gate Charge: 123nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 30A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 41ns
Rise Time: 43ns
Fall Time: 33ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 20.3mm
Length: 15.9mm
Input Capacitance: 2159pF
Package Style:  TO-247AC
Mounting Method: Flange Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
400
Multiple Of:
25
Total
$464.00
USD
Quantity
Unit Price
1
$1.21
40
$1.19
150
$1.17
400
$1.16
1,500+
$1.13
Product Variant Information section