
Manufacturer Part #
IRFP250NPBF
Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET® Power Mosfet - TO-247AC
Infineon IRFP250NPBF - Product Specification
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Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Subject: Introduction of an additional wafer production at Infineon Technologies Kulim, Malaysia and change of wafer diameter from 150mm to 200mm for several G5.5 MOSFETReason: The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy.
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Infineon IRFP250NPBF - Technical Attributes
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 0.075Ω |
Rated Power Dissipation: | 214W |
Qg Gate Charge: | 123nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 30A |
Turn-on Delay Time: | 14ns |
Turn-off Delay Time: | 41ns |
Rise Time: | 43ns |
Fall Time: | 33ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 20.3mm |
Length: | 15.9mm |
Input Capacitance: | 2159pF |
Package Style: | TO-247AC |
Mounting Method: | Flange Mount |
Available Packaging
Package Qty:
25 per Tube
Package Style:
TO-247AC
Mounting Method:
Flange Mount