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Manufacturer Part #

IRFP250MPBF

Single N-Channel 200 V 75 mOhm 123 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFP250MPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 75mΩ
Rated Power Dissipation: 214W
Qg Gate Charge: 123nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 30A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 41ns
Rise Time: 43ns
Fall Time: 33ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 2159pF
Package Style:  TO-247AC
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
800
Multiple Of:
25
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$660.00
USD
Quantity
Unit Price
25
$0.875
100
$0.85
500
$0.825
1,000
$0.81
3,125+
$0.78
Product Variant Information section